2

Uniformity and Scalability of AlGaN/GaN HEMTs Using Stepper Lithography

Year:
2001
Language:
english
File:
PDF, 80 KB
english, 2001
9

As heterostructures at very low temperatures

Year:
1988
Language:
english
File:
PDF, 539 KB
english, 1988
13

Single Chip White LEDs

Year:
2002
Language:
english
File:
PDF, 233 KB
english, 2002
16

Overhauser shift and dynamic nuclear polarization in InP

Year:
1989
Language:
english
File:
PDF, 411 KB
english, 1989
22

Origin of the Q=11 meV bound exciton in GaN

Year:
1997
Language:
english
File:
PDF, 133 KB
english, 1997
24

X-ray analysis of the texture of heteroepitaxial gallium nitride films

Year:
1999
Language:
english
File:
PDF, 429 KB
english, 1999
26

Doping of single crystalline diamond with nickel

Year:
2010
Language:
english
File:
PDF, 138 KB
english, 2010
29

Self-compensation in Mg doped p-type GaN grown by MOCVD

Year:
1998
Language:
english
File:
PDF, 82 KB
english, 1998
38

Ionized donor bound excitons in GaN

Year:
1997
Language:
english
File:
PDF, 349 KB
english, 1997